High Power and high bandwidth photoconductive terahertz emitters and detectors made of iron doped InGaAs

Abstract

In non-destructive testing (NDT) and industrial process monitoring [1], reflection geometry is commonly preferred over transmission, because only one-side access to the sample is possible. State-of-the-art terahertz (THz) time domain spectroscopy (TDS) systems hitherto use different emitter and detector devices [2], such that either an angled THz beam path or a beam splitter is required to enable reflection measurements. This leads to rather bulky and complex setups. An integrated THz device, combining the emitter and detector on a single chip, would significantly facilitate reflection measurements. For competitive integrated devices a photoconductive material, which is both compatible to the excitation with 1550 nm femtosecond pulses and applicable as THz emitter and detector has to be found.