Abstract
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm−2 at 3 V, a low specific on-resistance (R ON,sp) of 0.22 mΩ cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.
Highlights
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit
Sensitive silicon- or GaAs-based SBD detectors have been demonstrated for microwave power detection at high frequency; they are limited at a microwave detectable
We demonstrate a quasi-vertical GaN SBD with a very high forward current
Summary
As a wide bandgap semiconductor material, GaN has superior properties of a higher critical electric field and a higher. In a PIN diode based quasi-active microwave limiter, a Schottky barrier diode (SBD) based power detector is often utilized to generate bias current for the PIN diode to lower the limiting threshold level [5,6,7,8]. A high-power and high-output-current microwave SBD is required. Sensitive silicon- or GaAs-based SBD detectors have been demonstrated for microwave power detection at high frequency; they are limited at a microwave detectable. GaN SBDs are promising candidates for improving microwave detection power. We demonstrate a quasi-vertical GaN SBD with a very high forward current. The improved forward characteristics of the diode with post-mesa nitridation assist to increase the detectable microwave power
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