High-Power AlGaInN Lasers

Abstract

We have successfully fabricated high-power AlGaInN laser diodes with long lifetime, high kink level, wide beam divergence angle parallel to the junction plane (θ‖), and low relative intensity noise (RIN). We have also adopted a 3″ϕ sapphire substrate to improve productivity and have achieved uniform fabrication using a carefully designed quartz reactor and heating system. The introduction of a new laser structure successfully provided a dramatic improvement in device properties. In particular, the characteristic temperature (T0) was improved to 235 K, which is the highest ever reported. In addition, we fabricated a super high power (SHP) AlGaInN blue-violet laser diode array, achieving a maximum light output power of 4.2 W under cw-operation at 25 °C with a lifetime under 1 W cw-operation at 25 °C of more than 1000 h.