Abstract
High-power semiconductor lasers based on AlGaInAs/InP heterostructures and emitting in the spectral range 1.9−2.0 μm are developed. Strain compensation in the active region makes it possible to use InGaAs quantum wells with a compressive strain of about 2.0 %−2.5 %. The operation of a laser with an ultra-narrow waveguide at wavelengths increasing from 1.4−1.6 to 2.0 μm is studied. At room temperature, the semiconductor lasers with a stripe contact width of 100 μm demonstrates a cw output optical power of 1.0 W with a wavelength of 1.91 μm at a pump current of 6.5 A and with a wavelength of 1.98 μm at a pump current of 7.2 A.
Published Version
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