Abstract
AbstractA high‐power single‐stripe AlGaAs laser diode capable of reliable operation at an output power greater than 50 mW is useful for improvement in optical data storage systems and second harmonic generation elements. A novel window structure laser diode is developed and referred to as a window‐grown‐on‐facets (WGF) laser. Highly reliable operation is attained under 10 mW at 50°C beyond 10, 000 hours in the wavelength of 830 nm and under 70 mW at 60°C beyond 4000 hours in the wavelength of 780 nm, respectively. In the WGF laser, the window effects are found only in the case of the Al content of the window layer greater than that of the cladding layer. To explain the experimental results, calculation of carrier leakage from the active layer to the window layer is performed. The reduction of the window effects is caused by the carrier leakage.
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