High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

Abstract

Stable and reliable AlGaAs high power single quantum well lasers prepared by molecular beam epitaxy have been realized. We have prepared both 50-μm devices operating in multiple modes and ridge-waveguide single transverse-mode devices. Good reliability has been confirmed under the operating condition of 500 mW at 50 °C for the former type of devices and under the condition of 50 mW at 50 °C for the latter type of devices over 1000 h. These results indicate that molecular beam epitaxy is capable of making reliable high power laser diodes.