Abstract

We have developed high power integrated thermoelectric generators (μTEGs). These μTEGs are CMOS compatible, i.e. based on polycristalline SiGe materials. These μTEGs have been processed directly on a silicon interposer. Even if poly-SiGe exhibits low thermoelectric performances at room temperature, the specific design and proposed architecture enable μTEGs to deliver up to 680 μW for a temperature difference at 15.5 K. To reach such high power, an original 2.5D structure has been developed and μchannels technology has been associated, below the μTEG, to dissipate heat coming from the hot side. μTEGs have been tested in real environment, located below a hot test chip. Such μTEG performances overtake those from similar state-of-the-art CMOS compatible devices, and pave the way for a potential use in different applications such as sensors power supply or battery charger.

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