Abstract
High-power 2.3 µm In(Al)GaAsSb/GaSb type-I double quantum-well diode laser arrays have been fabricated and characterised. Linear laser arrays with 19 100 µm-wide elements on a 1 cm-long bar generated 10 W in continuous-wave (CW) mode and 18.5 W in quasi-CW mode (30 µs/300 Hz) at a heatsink temperature of 18°C.
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