Abstract
A high repetition frequency high power and narrow pulse width laser output at 532 nm is realized by using the technology of electro-optical cavity emptying and cascade amplification in this paper. Using semiconductor laser end pump Nd:YVO4 crystal, and with electro-optical cavity emptying technology, the1064 nm seed laser output with power of 6 W, repetition frequency of 100 kHz and high beam quality is obtained. After six-stage amplification and double frequency crystal, the 532 nm laser output with frequency of 100 kHz, pulse of 3.77 ns and power of 60.2 W is obtained. The effective double frequency efficiency reaches 68.8%. The output power stability over 120 min is better than 3%.
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