Abstract
With the rapid development of coherent optical communication systems, lasers are required to have higher power and narrower linewidths. In this paper, a process method using buried heterojunction is proposed. By comparing the optoelectronic properties of lasers with different mesa widths and different cavity lengths, the laser with a 1000 µm cavity length and a mesa width of 2.4 µm can reach 133.7 mW at 25°C at 300 mA, and a side mode suppression ratio (SMSR) greater than 50 dB. This laser also exhibits low relative intensity noise (<-150d B/H z at 260 mA) and narrow linewidth (<200k H z).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
