Abstract
AbstractRecent progress on InGaAs/GaAs strained‐layer quantum‐well lasers using InGaP cladding are reported. The 0.98‐, 1.02‐, and 1.06‐μm polyimide buried ridge waveguide lasers fabricated by using selective chemical etching are applicable to high‐power use. Further, employing InGaAsP layers lattice matched to GaAs enables the realization of GRIN‐SCH lasers, which is expected to be a technique to improve the laser characteristics. © 1994 John Wiley & Sons, Inc.
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