Abstract
BiFeO3–BaTiO3 (BF–BT) ceramics with high Curie temperature and excellent piezoelectric coefficient are expected to be applied in high-temperature piezoelectric sensors and actuators. However, its resistivity decreases rapidly with temperature and impedes its further applications. Moreover, normal methods such as doping modification cannot address this issue. In the present work, bismuth layered Bi4Ti2.93(Zn1/3Nb2/3)0.07O12 (BIT) and perovskite 0.36BiScO3-0.64PbTiO3 (BSPT) ceramics were selected as insulating layers and were, respectively, sintered with 0.7BF–0.3BT ceramics to form laminated ceramics. The heterojunction structures effectively prevent carrier migration, and both resistivities of BIT and BSPT laminated ceramics were increased from 106 to 108−9 Ω cm at 300 °C. In addition, piezoelectric properties of the BSPT-type laminated ceramics are much higher than that of BF–BT ceramics, in which the bipolar strain was increased from 0.04% to 0.1% (4 kV/mm), and d33 was increased from 140 to 237 pC/N. Therefore, designing the insulating layer may be an effective method to realize the high-temperature application for BF–BT ceramics.
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