High Photosensitivity in Cis-Poly(phenylacetylene) Films Irradiated by Electron Beams

Abstract

Photosensitivity in cis-poly(phenylacetylene) (cis-PPA) films prepared with rare-earth coordination catalysts can be greatly improved by the irradiation with electron beams. Irradiation energy is a key factor for obtaining high photosensitivity. The potential discharge rate and difference between the initial and residual potential under an IR-lamp exposure increase with increasing energy from 1.3 to 1.8 MeV. Photosensitivity in cis-PPA remains almost constant if the irradiation flux is more than the critical flux (1×10 e cm−1). The irradiation effect for electron beams is strongly dependent on the microstructure of PPA and irradiation atmosphere. The dependence of the photosensitivity of the irradiated cis-PPA films on their storage time and temperature has been investigated. The characterization results of the irradiated cis-PPA have been described. A mechanism by which electron beams induce high photosensitivity in cis-PPA is proposed.