Abstract
High Photoconductivity in Heavily Doped GaAs/AlAs Superlattices with Electric Domains
Highlights
Triangular voltage pulses with sweep-up times of 0.2 to 10 μs and sweep-down times up to 100 μs were used to record I-V curves
GaAs quantum wells (QWs) were Si doped with concentration of 2*1017cm-3
The photocurrent at the domain regime could reach 50% of the dark current, while it was several orders of magnitude less at voltages below the threshold one as the free carrier concentration excited with light was considerably less than Si donor concentration
Summary
Triangular voltage pulses with sweep-up times of 0.2 to 10 μs and sweep-down times up to 100 μs were used to record I-V curves. GaAs quantum wells (QWs) were Si doped with concentration of 2*1017cm-3. A sharp decrease of current at some threshold voltage (Fig. 2) indicates the moving domain formation.
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