High‐Permittivity Composites Thin Films for High‐Energy Storage Capacitor Application Using the Nonvacuum Method

Abstract

ABSTRACTTo investigate a new embedded capacitor material with high capacitance value, the high dielectric constant (Ba0.8Sr0.2)(Ti0.9Zr0.1)O3 ceramic was ground into nanoscale powder (nano‐BSTZ, the average particle size was approximately 73 nm). Different nano‐BSTZ contents were mixed with polyvinylidene fluoride (PVDF) to form the PVDF/nano‐BSTZ composites. The PVDF/nano‐BSTZ composite films were formed by using the nonvacuum screen printing method on indium tin oxide (ITO) glass, and their thickness was approximately 2 μm. As the nano‐BSTZ content increased from 10 to 50 wt%, the specific capacitance of the PVDF/nano‐BSTZ composite films really increased. Three different mixing rules were used to predict the effective dielectric constants of the PVDF/nano‐BSTZ composite films, and the Bruggeman's effective medium approximation and the Lichtenecker logarithmic mixing rules fitted the measured results. For the printed PVDF/nano‐BSTZ composite films, the dielectric constants also decreased with increasing measured frequency and the loss tangents were all less than 5%.