Abstract

Despite the significant progress in high thermal-resisting photocurable resin, the simultaneous achievement of robustness, stretchability, and dielectric properties in modified naphthalene-type photocurable resin remains a great challenge owing to intrinsic restrictions mediated by strong π-π stacking effect. Herein, a simple and feasible method is demonstrated to respectively introduce three selected di-functional acid chain extenders into 1,6-naphthalene diglycidyl ether (NDE), and prepare a series of naphthalene-type photocurable enhancement resin with excellent thermal/mechanical properties and low dielectric traits. Most importantly, the effect of the increase of succinic acid (SA) chain-extending segments on the thermal and mechanical properties of SA chain-extending NDE (S-NDE) resin is systematically investigated. An optimized synthesized route is presented by chain extension chemical strategy, which enables the improvement of the “seesaw” issue between high heat resistance and mechanical robustness. As a consequence, the optimized UV-curing S-NDE thin film exhibits robust tensile strength (75.45 ± 4.46 MPa), excellent heat resistance (Tg: 145.4 °C), high stretchability (7.22 ± 0.85 %), and desired dielectric constant (2.2). Meanwhile, the uncured S-NDE resin exhibited an excellent alkali elution property within 5 min. An actually printed circuit board (PCB) solder resistance coating/patterning application is further demonstrated based on the selective elution property of high-performance formulated S-NDE green ink, providing an efficient strategy for the design and fabrication of high-performance naphthalene-type photocurable materials.

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