Abstract
ZnO based heterostructures with metal chalcogenides have gained enormous attention in photonic applications owing to their high absorption coefficient and high photo-response. Several studies have been carried out on ZnO-based photodetectors. In present work, simple facile hydrothermal route was opted for synthesis of ZnO-ZnSe heterostructures. The as-prepared heterostructures were characterized by PXRD, TEM and UV–vis spectroscopy. PXRD showed that there is lattice shrinkage of the ZnO after the heterostructure formation with ZnSe. The DRS and UV–vis data revealed a Type II band alignment of ZnO and ZnSe in the heterostructure which results in the slower recombination of electron-hole pairs after illumination of light. ZnO-ZnSe heterostructures showed wide range absorption spectra and expected to have better photo-generated charge carrier’s life time, which will be ideal for the fabrication of photo-detector. The ZnO-ZnSe heterostructures based photodetector produced a fast rise and decay time of 23 and 80 ms; and a high photo-responsivity (91.25 mAW−1) indicating importance of ZnO-ZnSe heterostructures for high performance photodetectors. This work demonstrates the instant photo-response with high photo-responsivity which proves it as a potential candidate for optoelectronic devices.
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