Abstract
Polarity regulation is the biggest obstacle to the application of two-dimensional materials in logic circuits. Here, we demonstrate an innocuous doping strategy for modulating the polarity of WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> field-effect transistors (FETs). The substoichiometric indium oxide (InO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> ) was employed to realize the n-type WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FETs. In stark contrast to others reporting the reduction of electron-dominant current with n-type metal/oxide doping, the InO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -doped strategy demonstrated herein facilitates superior electron-dominant current, which can be attributed to the van der Waals interface between InO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> and WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> . Furthermore, the InO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -doped n-type FET was connected with the undoped p-type FET to construct an inverter, which exhibited an ultrahigh Gain exceeding 120 with a full width at half of the maximum gain of only 30 mV and total noise margin around 80%. The damage-free doping strategy allowed the integration of complementary WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> FETs with impressive performance, thereby paving the way for practical applications in WSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> integrated circuits.
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