High-performance visible-near IR photodetectors based on high-quality Sn2+-sensitized PbS films

Abstract

High-quality Sn2+-sensitized PbS films were deposited via a cost‐effective chemical route. The results demonstrate that the Sn2+-sensitized PbS thin films have better crystallinity and larger grain size. Photoelectric performance of Sn2+-sensitized PbS films has been improved greatly in the visible and near-infrared range. With Sn2+ sensibilization, photoresponsivity is more than 9 times higher, and detectivity is as high as ~1010 cm2 Hz1/2 W−1. Notably, the response speed of the Sn2+-sensitized PbS films reaches a magnitude of microseconds, which is over 105 times improvements compared with the pure PbS film devices. Additionally, high-frequency switching behavior at 4 kHz shows excellent stability. Based on the feasible method and excellent photoelectric performance of the devices, it has been demonstrated that Sn2+ sensibilization is of viability to improve the detection performance of commercial photodetectors.