High-performance UV–visible Photodetectors Based on CH3NH3PbI3-xClx/GaN Microwire Array Heterostructures

Abstract

• Schematic drawing of the CH3NH3PbI3-xClx/GaN microwire array heterostructures photodetector. • Characterization of the CH3NH3PbI3-xClx/GaN microwire array photodetector. • Photoelectric performance compared to the hybrid three types of photodetectors from ultraviolet to visible light region. • I-V curves with or without perovskite layer measured in the dark and under 325 nm light irradiation. • The mechanism to improve the performance of heterostructure photodetector was discussed In recent years, the combination of perovskites with other materials to improve the photoelectric performance has received widespread attention. In this work, we demonstrate a hybrid heterostructure photodetector with the combination of GaN microwire array and perovskite. Compared to perovskite and GaN microwire array photodetectors, the hybrid CH 3 NH 3 PbI 3- x Cl x /GaN microwire array photodetector exhibits more excellent photoelectric performances in a wide detection range from ultraviolet to visible. Under 325 nm laser irradiation, the hybrid photodetector generates a large photocurrent (1.04 ×10 -5 A), a high on/off ratio (>10 4 ), a fast response time (raise time of 0.66 ms and decay time of 0.71 ms), and higher responsivity , detectivity. Meanwhile, when the perovskite is combined with the GaN microwire array, the device also has a higher photocurrent, on/off ratio, and faster photoresponse compared with the perovskite photodetector in the visible light region. This is interpreted as the effective separation photogenerated carriers at the hetero-interface, and the directional transfer of carriers within the one-dimensional GaN microwire array. This study sheds light on fabricating high-performance heterostructures photodetectors.