High performance UV–Vis photodetectors based on tin monosulfide film synthesized by physical vapor deposition

Abstract

Two-dimensional tin monosulfide (SnS) has demonstrated high absorption coefficient, narrow band gap, and superior carrier mobility, which the excellent properties make it more promising in the optoelectronic devices field. Herein, a series of 2D SnS film with different thicknesses are prepared by physical vapor deposition and the film possess high crystallinity and less defect. The SnS based photoelectrochemical photodetector has been designed, which shows the high photoresponse and fast response time in UV–Vis region. Importantly, this photodetector not only shows higher Iph (5.50 μA/cm2) and Rph (16.34 μA/W) at 0.6 V but also exhibits a self-powered photoresponse behavior even at 0 V. This study demonstrates that the PVD-grown SnS film in centimeter-scale has a great potential for high performance photoelectrochemical photodetector.