High‐Performance Transistors and Complementary Inverters Based on Solution‐Grown Aligned Organic Single‐Crystals

Abstract

Constructing a complementary inverter is technically more complex because both pand n-channel transistors are required to be patterned onto a common substrate. Here, we report a simple solution processing method to fabricate complementary inverters based on n-channel C 60 single crystals and p-channel 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) single crystals. We achieved a signal gain as high as 155. Hence, this work provides a platform to study high-performance complementary circuits based on organic single-crystals. Organic FETs have been widely used for electronic applications such as displays [ 5 , 6 ] and sensors. [ 7–9 ] Organic single-crystals show the best FET performance with the highest charge mobility among organic materials. The p-channel organic single-crystal FETs have exhibited hole mobility as high as 40 cm 2 V − 1 s − 1 , [ 10–14 ]