High performance top-gate field-effect transistors based on poly(3-alkylthiophenes) with different alkyl chain lengths

Abstract

The device characteristics of top-gate field-effect transistors (FETs) based on typical polymer semiconductor regioregular poly(3-alkylthiophenes) (P3ATs) with different alkyl chain lengths are investigated. High field-effect mobilities of ∼10−2cm2/Vs are obtained irrespective of alkyl chain length even when polymer gate insulators with different dielectric constants (2.1–3.9) are used. This is attributed to the spontaneous formation of highly ordered edge-on lamellar structures at the surface of P3AT thin films that are the channel regions in top-gate FETs. In addition, top-gate P3AT FETs containing different gate insulators exhibit high operational stability, with low threshold voltage shifts of <0.5V following prolonged gate bias stress, which is comparable to that of hydrogenated amorphous silicon thin film transistors.