Abstract

The use of advanced materials has resulted in a significant improvement in thermoelectric device conversion efficiency. Three-stage cascade devices were assembled, consisting of nano-bulk Bi2Te3-based materials on the cold side, PbTe and enhanced TAGS-85 [(AgSbTe2)15(GeTe)85] for the mid-stage, and half-Heusler alloys for the high-temperature top stage. In addition, an area aspect ratio optimization process was applied in order to account for asymmetric thermal transport down the individual n- and p-legs. The n- and p-type chalcogenide alloy materials were prepared by high-energy mechanical ball-milling and/or cryogenic ball-milling of elementary powders, with subsequent consolidation by high-pressure uniaxial hot-pressing. The low-temperature stage materials, nano-bulk Bi2Te3−x Sb x and Bi2Te3−x Se x , exhibit a unique mixture of nanoscale features that leads to an enhanced Seebeck coefficient and reduced lattice thermal conductivity, thereby achieving an average ZT of ~1.26 and ~1.7 in the 27°C to 100°C range for the n-type and p-type materials, respectively. Also, the addition of small amounts of selected rare earth elements has been shown to improve the ZT of TAGS-85 by 25%, compared with conventional or neat TAGS-85, resulting in a ZT = 1.5 at 400°C. The incorporation of these improved materials resulted in a peak device conversion efficiency of ~20% at a temperature difference of 750°C when corrected for radiation heat losses and thermal conduction losses through the lead wires. These high-efficiency results were shown to be reproducible across multiple cascade devices.

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