Abstract
Avalanche photon diode and avalanche diode array, working in Geiger mode, have single photon detection capability. The structure of guard ring is the key factor to avoid the premature edge breakdown of the avalanche diode and increase the maximum bias voltage. A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring. Simulation results indicate that the maximum bias voltage of the proposed guard ring is higher than that of the state-of-the-art methods.
Highlights
From the mid-1990s onwards, the use of dedicated CMOS-compatible processes fostered significant advances in building multichannel photon-counting modules, making SPAD devices become a robust and competitive technology to detect single photon like confocal microscopy, biological essays, particle detection, quantum key distribution, DNA microarray, LIDAR and adaptive optics in astrophysics [1] [2] [3]
A new structure of the guard ring is proposed in this letter, in which the floating guard ring is put outside the p-well guard ring
In order to keep away from premature edge breakdown and increase the maximum bias voltage of the avalanche diode, a new structure of guard ring in avalanche diode is proposed in this letter
Summary
From the mid-1990s onwards, the use of dedicated CMOS-compatible processes fostered significant advances in building multichannel photon-counting modules, making SPAD devices become a robust and competitive technology to detect single photon like confocal microscopy, biological essays, particle detection, quantum key distribution, DNA microarray, LIDAR and adaptive optics in astrophysics [1] [2] [3]. Leitner and Hendersonin literature [8] and [9] ameliorated the performance of virtual guard ring All these above efforts are beneficial to prevent from the premature edge breakdown of the avalanche diode. These guard rings are not able to withstand the higher reverse bias voltage. In order to keep away from premature edge breakdown and increase the maximum bias voltage of the avalanche diode, a new structure of guard ring in avalanche diode is proposed in this letter. P-guard ring is put outside the p-well guard ring, which reduce the electric field intensity of the edge of guard ring and makes it possible to withstand higher reverse bias voltage
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