Abstract
A low-temperature doping approach has been developed for fabricating nitrogen and sulfur co-doped few-layer graphene (NS-FLG) by annealing graphene oxide in KSCN molten salt at 175 °C. The as-prepared NS-FLG with a high doping level and unique few-layer structure delivers remarkable performance for sodium-ion batteries (SIBs) in terms of a high reversible capacity of 325.4 mA h g-1 at 0.5 A g-1, a superb rate capacity of 203.6 mA h g-1 at 10 A g-1, and ultra-long cyclability over 5100 cycles. This work provides a new avenue for exploring advanced graphene-based materials towards SIBs and even other electrochemical fields.
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