Abstract
In this work, we report high performance Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.45</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.55</sub> Implant Free Quantum Well (IFQW) pFET with high drive current of 1.28mA/um at Ioff=160nA/um at channel length/width of 30nm/0.16um (Vdd=-1V). This is enabled by 1) low temperature process which maintains the integrity of the high mobility of Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.45</sub> Ge <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">.55</sub> channel, 2) embedded SiGe (eSiGe) stressor which is fully compatible with SiGe channel and 3) relaxation of unwanted transversal stress at narrow width channel which results in a significant mobility boost (1.9× mobility improvement from active width of 10um to 0.1um).
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