High performance silicon carbide avalanche‐p‐i‐n ultraviolet photodiode with dual operation models

Abstract

Silicon carbide-based quasi-separated-absorption-multiplication ultraviolet avalanche photodiode (APD) with a small-area multiplication region and a large-area absorption region, which comprises of a p+nn− junction encircled by a p+n− junction, is proposed, and its optoelectronic performance is modelled. The modelling results show a 4H-SiC APD with high performance can be achieved. Moreover, when operated at a low reverse bias (e.g. 5.0 V), the photodiode has almost the same optoelectronic characteristics as the 4H-SiC p-i-n photodiode. It is noted that the device has benefited advantages of both conventional separate absorption and multiplication APD and p-i-n photodiode in the wavelength range of ultraviolet detection, which enable the dual operation models of the device.