Abstract
The potential of a high-performance low-cost silicon bipolar technology for high-efficiency low-voltage RF power amplifiers has been explored. To this end, a unit power cell has been developed by optimizing layout design, collector thickness and doping level. On-wafer load-pull measurements were performed which showed an excellent power-added efficiency of 83% at 1.8 GHz under a supply voltage of 2.7 V. The optimized unit power cell was employed to implement a 1.8 GHz three-stage monolithic power amplifier. The device achieved a 57% maximum power-added efficiency and 33-dB gain at a 34-dBm output power level while operating at 2.7 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
