Abstract
In this work, high-performance top-gate indium-tin-oxide (ITO) transistors with high carrier mobility of 60 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V∙s have been successfully demonstrated using optimized atomic layer deposited (ALD) La-doped HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> as the top-gate dielectric. The scaled device with a channel length of 50 nm exhibits a high current on/off ratio over 7×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> owing to the excellent electrostatic control. A maximum output current of 1680 μA/μm with a remarkable carrier velocity of 0.87×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> cm/s has also been achieved due to the record low contact resistance of 180 Ω∙μm. The on- and off-state performance of our ITO transistors are the highest among previous top-gate amorphous oxide semiconductors.
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