Abstract
We describe AlGaAs/GaAs multiquantum-well (MQW) injection lasers with a ridge-waveguide structure wherein an extremely low threshold and a high efficiency are achieved. A ridge-waveguide with a stripe width of 3 µm was formed by Ar <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ion beam etching to realize a single mode lasing. The threshold current for a 200 µm long laser was 13 mA, and the external differential quantum efficiency as high as 60 % was obtained. Single-mode CW operation with a threshold current of 15 mA, has been successfully achieved at room temperature by the p-side up configuration. The characteristic temperature higher than 200°C was obtained at the heat sink temperature between 10 - 100°C.
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