Abstract
A device structure of resonant cavity light emitting diodes （RCLED） at 650nm wavelength was proposed by using AlGaAs as the n-type bottom DBR, AlGaInP as the p-type top DBR, and GaInP/AlGaInP MQW as the active region. The device was designed according to the transfer matrix method, and both RCLED and normal LED were fabricated for comparison. Results showed that the efficiency of RCLED is 30% higher than the normal LED, and the peak wavelength of RCLED changed only 1nm when the driving current increased from 3mA to 30mA, compared with that of 7nm for the normal LED. Meanwhile, RCLED has a narrower spectrum and a smaller far field divergence angle.
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