Abstract
In this study, we developed a sensitive red-light photodetector (RLPD) based on CsBi3I10 perovskite thin film. This inorganic, lead-free perovskite was fabricated by a simple spin-coating method. Device analysis reveals that the as-assembled RLPD was very sensitive to 650 nm light, with an on/off ratio as high as 105. The responsivity and specific detectivity of the device were estimated to be 21.8 A/W and 1.93 × 1013 Jones, respectively, which are much better than those of other lead halide perovskite devices. In addition, the device shows a fast response (rise time: 0.33 ms; fall time: 0.38 ms) and a high external quantum efficiency (4.13 × 103%). It is also revealed that the RLPD has a very good device stability even after storage for 3 months under ambient conditions. In summary, we suggest that the CsBi3I10 perovskite photodetector developed in this study may have potential applications in future optoelectronic systems.
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