Abstract
In this letter, we demonstrate high performance GaN vertical Schottky diode on sapphire substrate. With optimized device structure and adopting low dislocation patterned sapphire substrate (PSS), a high DC performance with low turn-on voltage of 0.45 V, on-resistance of 0.084 mΩ cm2 and breakdown voltage above 100 V is achieved at a 6 × 100 μm2 anode size. Meanwhile, two types of GaN Schottky barrier diode (SBD) with different anode area were fabricated to investigate its influence on device characteristics. We have observed a larger current density and smaller leakage current with reducing the anode size, contributing to a more compact design for cost reduction.
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