Abstract
A new structure Power MOSFET, which exhibits a lower on-state resistance and lower gate charge than the conventional layout geometry, is proposed in this research. Vertical Power MOSFETs are generally designed by either squared (closed) or stripe (linear) geometry; each has its own advantages and drawbacks. Typically, design has lower on resistance but higher gate charge characteristics than the linear one. In this study, we propose, fabricate, and analyze a cell structure Power MOSFET, which can have lower on resistance and lower gate charge performances than the structure. In addition, the wing design can avoid the closed concept patents.
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