Abstract
Metal oxides based semiconductors promise high performance gas sensing owing to their robustness and low cost, but are limited by their unsatisfied adsorption ability and intrinsic low carriers' mobility. We herein demonstrate an efficient strategy of reducing the adsorption energy and improving the carrier mobility via bulk implanted TiO2 nanocrystals (NCs) in LaFeO3 porous structure. By implanting laser generated sub-3 nm TiO2 NCs in LaFeO3 samples, the response value (221.8 for 100 ppm formaldehyde) increases about 4 times comparing with that of pristine. Additionally, the sample exhibits high sensitivity and fast response/recovery speed toward formaldehyde steam. The detailed analyses and theoretical calculation proves that the TiO2 NCs could cause the increase of adsorbed oxygen levels as well as the carrier mobility through forming the heterojunction with LaFeO3. This work verifies that TiO2 NCs implanted LaFeO3 is a promising formaldehyde sensing material, which provides a new approach to improve sensing ability of metal oxide semiconductor (MOS) based gas sensors.
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