Abstract
High-performance thin-film transistors (TFTs) with electron-cyclotron resonance (ECR) plasma hydrogen passivation fabricated by the use of laser-recrystallized multiple-strip-structure poly-Si film are discussed. These TFTs have n-channel enhancement-mode characteristics with a large transconductance, a high switching ratio, and a threshold voltage as low as 0.4 v. The ECR-plasma hydrogen passivation of laser-recrystallized poly-Si, reduces the trap density of poly-Si and increases the carrier mobility thus, desirable TFT characteristics are obtained. This passivation increased the transconductance (g/sub m/) of a TFT and decreased the leakage current between the source and the drain. As a result, a switching ratio as high as 2.5*10/sup 9/ and very low leakage current of the order of 10/sup 14/ A can be achieved by these high-performance TFTs. >
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