Abstract
We report a piezoelectric gated diode that is composed of a single ZnO nanobelt with ± (0001) polar surfaces being connected to an indium tin oxide (ITO) electrode and anatomic force microscopy (AFM) tip, respectively. The electrical transport iscontrolled by both the Schottky barrier and the piezoelectric barrier modulatedby the applied forces. The diode exhibits a high ON/OFF current ratio (up to1.6 × 104) and a low threshold force of about 180 nN at 4.5 V bias. The electrical hysteresis issuggested to be attributed to be carrier trapping in the piezoelectric electric field.
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