High-performance phototransistor based on individual high electron mobility MnWO4 nanoplate

Abstract

MnWO4 nano-materials have been attracting intensive attention as a potential candidate for modern electronic and optoelectronic nanodevices. However, the availability of highly crystalline MnWO4 nanostructures with controllable geometry shapes still remains a great challenge and further hinders their technologically important applications in optoelectronic devices. Herein, large yield and crystalline MnWO4 nanoplates with regular crystal facets are synthesized on Ti substrate based on a conventional plasma electrolytic oxidation (PEO) process followed by a thermal annealing method. The phototransistor based on individual high electron mobility MnWO4 nanoplate has been fabricated and it shows a classical n-type semiconductor behavior with superior field emission transistor (FET) properties including a very low threshold voltage of 1 V and a high peak transconductance of 2.7 μS. Furthermore, the MnWO4 phototransistor also exhibits fast photoresponse time and high photoresponsivity under light illumination. All these unique characteristics of incident-light control and gate regulation from the MnWO4 nanoplate are expected to further promote its potential applications in multifunctional optoelectronic devices in the future.