Abstract
We report the study on the structural and photoelectric properties of β-Ga2O3 films on sapphire substrates prepared by polymer-assisted deposition (PAD). The characterizations reveal that the β-Ga2O3 films are smooth and composed of crystals with single preferential orientation of (−201). As the low defect density, the solar-blind ultraviolet (UV) photodetector based on the β-Ga2O3 films shows high-performance photoresponse behaviors with lower dark current and faster speeds. Our results suggest that the β-Ga2O3 films prepared by low-cost PAD have great potentials for optical and optoelectronic applications.
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