High-Performance Photodetectors Using Transition Metal Dichalcogenide (TMD)-based Hybrid Structures

Abstract

We demonstrate the high-performance TMD (WSe2 and ReSe2) photodetectors with a high responsivity (1.3×106 A/W for WSe2 and 1.2×106 A/W for ReSe2) and fast temporal photoresponse (rising/decaying time: 2.8/20.8 ms for WSe2 and 58/263 ms for ReSe2). These were achieved by (i) applying PPh3 n-doping technique and (ii) inserting passivating layers (h-BN or APTES layers). Through the PPh3-based n-doping process, we significantly increased the photoresponsivity of the both WSe2 and ReSe2 photodetectors (2.7×103 → 4.3×105 A/W for WSe2 and 4.0×103 → 3.7×104 A/W for ReSe2). In particular, by inserting a h-BN layer at the WSe2/SiO2 interface and an APTES layer at the ReSe2/SiO2 interface, respectively, we further enhanced fast temporal photoresponse (rising/decaying time: 97/827 → 2.8/20.8 ms for WSe2) and high responsivity (3.7×104 → 1.2×106 A/W for ReSe2).