Abstract
Lead halide perovskites are a promising candidate for the development of novel optoelectronic devices. Although substantial development has been achieved after years of research, it is still a challenge to prepare large-area high-quality CsPbBr3 thin films by simple processes. In this work, CsPbBr3 film can be used as a UV–Vis absorption active layer of heterojunction photodetector and a Ge-based infrared anti-reflective coating to optimize the photodetection performance of the device. CsPbBr3/p-Ge heterojunction photodetector exhibits self-powered (0 V) and broadband characteristics (365–1550 nm), the responsivity is 64 mA/W and the specific detectivity is 1.2 × 1012 Jones under 0 V bias and 1550 nm illumination. The rise and decay times of the device are 12.3 μs and 13.4 μs under 1310 nm illumination and 20 kHz operating frequency, respectively. This work further promotes the potential application and development of CsPbBr3 perovskites in integrated optoelectronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.