High-Performance Photodetectors Based on the 2D SiAs/SnS2 Heterojunction.

Yinchang Sun,Junyi Liao,Ziyue Qian,Zhao Ma,Liming Xie,Hongjun Liu,Zhanggui Hu,Sabir Hussain,Juanxia Wu,Hailong Qiu

doi:10.3390/nano12030371

Abstract

Constructing 2D heterojunctions with high performance is the critical solution for the optoelectronic applications of 2D materials. This work reports on the studies on the preparation of high-quality van der Waals SiAs single crystals and high-performance photodetectors based on the 2D SiAs/SnS2 heterojunction. The crystals are grown using the chemical vapor transport (CVT) method and then the bulk crystals are exfoliated to a few layers. Raman spectroscopic characterization shows that the low wavenumber peaks from interlayer vibrations shift significantly along with SiAs’ thickness. In addition, when van der Waals heterojunctions of p-type SiAs/n-type SnS2 are fabricated, under the source-drain voltage of −1 V–1 V, they exhibit prominent rectification characteristics, and the ratio of forwarding conduction current to reverse shutdown current is close to 102, showing a muted response of 1 A/W under excitation light of 550 nm. The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors. Our experimental results enrich the research on the IVA–VA group p-type layered semiconductors.

Highlights

Benefitting from novel optical and photoelectric properties, the application of twodimensional layered materials in the field of photodetection has attracted widespread attention [1,2,3,4,5]
Due to the limitation of material synthesis methods, the layer-dependent effect and device optoelectronic properties of this material require more research
The light responsivity and external quantum efficiency are increased by 100 times those of SiAs photodetectors

Summary

Introduction

Benefitting from novel optical and photoelectric properties, the application of twodimensional layered materials in the field of photodetection has attracted widespread attention [1,2,3,4,5]. Compared with common two-dimensional materials such as MoS2 and WS2 , the wider forbidden bandwidth and energy band position is beneficial to the absorption of visible light photons and their application in the field of photocatalysis [8,9]. Due to their inherent high in-plane anisotropy, such materials are significant in designing and applying photodetection, polarization sensor devices, and angle-dependent electronics [10,11,12,13,14,15,16,17].

Methods

Results

Conclusion