High performance photodetector based on Pd-single layer MoS2 Schottky junction

Abstract

Due to excellent photoelectric property of single layer molybdenum disulphide (SL MoS2), different kinds of photodetectors based on SL MoS2 have been reported. Although high photosensitivity was obtained, the rising and decay time of photocurrent were relatively large (>300 ms) when the current reached up to μA order. In this paper, we demonstrate a high sensitive and fast barrier type photodetector based on Pd-SL MoS2 Schottky junction. The photosensitivity can reach up to 0.88 A/W at 425 nm laser. Compared with SL MoS2 photodetectors based on ohmic contact, our device shows much shorter rising and a decay time of 24.7 ms and 24.5 ms, respectively, exhibiting the merit of barrier type photodetector.