High-Performance Perovskite Solar Cells Engineered by an Ammonia Modified Graphene Oxide Interfacial Layer.

Abstract

PSS)-GO: NH3/CH3NH3PbI3-xClx/phenyl C61-butyric acid methyl ester (PCBM)/(solution Bphen) sBphen/Ag improves their performance and perovskite structure stability significantly. The fabricated devices with a champion PCE up to 16.11% are superior in all the performances in comparison with all the reference devices without the GO:NH3 layer. To understand the improved device performances, synchrotron-based grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and UV-visible absorption measurements have been conducted on perovskite films on different substrates. It was found that these improvements should be partially attributed to the improved crystallization and preferred orientation order of peovskite structure, partially to the improved morphology with nearly complete coverage, partially to the enhanced optical absorption caused by the PSS-GO:NH3 layer, and partially to the better matched energy-level-alignment at the perovskite interface. Furthermore, the device was shown to be more stable in the ambient condition, which is clearly associated with the improved peovskite structure stability by the GO:NH3 layer observed by the GIXRD measurements. All these achievements will promote more applications of chemically modified graphene oxide interfacial layer in the PSCs as well as other organic multilayer devices.