Abstract
High-performance air-processed perovskite light-emitting devices (PeLEDs) combined with Si materials are currently an opportunity because of the potential applications in multiple function integration. Here, a high-efficient Si/perovskite heterojunction near infrared light-emitting device have been fabricated by controlling the quasi-two-dimensional (quasi-2D) phases via introduction of 4-fluorobenzylamine hydroiodide (FPMAI) while the whole device fabrication process is simple and under ambient air. It was found that the luminescence behavior could be modulated by changing the quasi-2D phase ratio. The external quantum efficiency reached 9.7% at the optimized parameters, which was 75% higher than that of the device with a pure three-dimensional phase. Our results indicate an appropriate and easy method to improve the performance of air-processed Si-based PeLEDs.
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