High Performance of Self-Aligned Transparent Polysilicon-Gate Thin-Film Transistors by NiSi<sub>2</sub> Seed-Induced Lateral Crystallization

Abstract

A heavily doped p-type polysilicon (poly-Si)-gate thin-film transistors using NiSi2 seed-induced lateral crystallization (SILC) were successfully developed for the transparent electronic device. The hydrogenated amorphous-silicons of gate and active layer were laterally crystallized and doped with B2H6 in self-aligned structure. The average transmittance of SILC poly-Si film showed 68% in the visible spectrum because of its 98% of crystalline volume fraction ( $\chi ^{c}$ ). Comparing with the metal-induced crystallized poly-Si poly-Si-gate, the electrical performance of the leakage current and threshold voltage was improved.