Abstract

ABSTRACTWe have succeeded to grow almost single-phase of Half-Heusler intermetallic compounds MNiSn, where M = (Hfx,Zr1−x) and x varies from 0 to 1, for the first time by directional solidification using optical floating zone melting (OFZ). Thermoelectric power and electrical resistivity can be dramatically improved since OFZ process effectively reduces solidification defects such as micro-cracks and cavities as well as unfavorable coexisting phases. Dimensionless thermoelectric figure of merit, ZT, of OFZ (Hf,Zr)NiSn alloys can be improved effectively by lowering the lattice thermal conductivity through the solid solution effects due to the substitution of Hf and Zr with each other. The maximum ZT value of 0.9 is achieved in (Hf0.5Zr0.5)NiSn at 963 K.

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