High Performance of Enhanced Mode Field Effect Transistor and Ultraviolet Sensor Based on ZnO Nanosheet

Abstract

ZnO nanosheets with thickness of a few nanometers are prepared by vapor transport and condensation method, and their structure and optical properties are well characterized. Field effect transistor (FET) and ultraviolet (UV) sensors are fabricated based on the ZnO nanosheets. Due to the peculiar structure of nanosheet, the FET shows n-type enhanced mode behavior and high electrical performance, and its field-effect mobility and on/off current ratio can reach 256 cm2/(V·s) and ∼108, respectively. Moreover, the response of UV sensors can also be remarkably improved to ∼3×108. The results make the ZnO nanosheets be a good material for the applications in nanoelectronic and optoelectronic devices.