Abstract
The size controlled Al nanoparticles (NPs) were prepared by magnetron sputtering and subsequent rapid thermal annealing. Significant deep ultraviolet (DUV) detection enhancement is demonstrated on 4H-SiC metal–semiconductor–metal (MSM) ultraviolet photodiodes (PDs) by introducing the coupling of localized surface plasmon resonance (LSPR) from Al NPs. The peak responsivity of 165 mA/W and quantum efficiency of 93% at 220-nm wavelength are achieved under deuterium lamp illumination when 10-V bias is applied, which is 3.93 times than that without Al NPs. LSPR at wavelength as low as 220 nm is the shortest one ever reported in Al NPs.
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